baq33, baq34, baq35 www.vishay.com vishay semiconductors rev. 1.8, 31-jul-12 1 document number: 85537 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diodes, low leakage current mechanical data case: minimelf sod-80 weight: approx. 31 mg cathode band color: black packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs18/10k per 13" reel (8 mm tape), 10k/box features ? silicon planar diodes ? very low reverse current ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? protection circuits, time de lay circuits, peak follower circuits, logarithmic amplifiers parts table part type differentiation ordering code type marking internal construction remarks baq33 v rrm = 40 v baq33-gs18 or baq33-gs08 - single diode tape and reel baq34 v rrm = 70 v baq34-gs18 or baq34-gs08 - single diode tape and reel baq35 v rrm = 140 v baq35-gs18 or baq35-gs08 - single diode tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit repetitve peak reverse voltage baq33 v rrm 40 v baq34 v rrm 70 v baq35 v rrm 140 v reverse voltage baq33 v r 30 v baq34 v r 60 v baq35 v r 125 v peak forward surge current t p = 1 s i fsm 2a forward continuous current i f 200 ma thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
baq33, baq34, baq35 www.vishay.com vishay semiconductors rev. 1.8, 31-jul-12 2 document number: 85537 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition p art symbol min. typ. max. unit forward voltage i f = 100 ma v f 1v reverse current e ? 300 ix, rated v r i r 13na e ? 300 ix, rated v r , tj = 125 c i r 0.5 a e ? 300 ix, v r = 15 v baq33 i r 0.5 1 na e ? 300 ix, v r = 30 v baq34 i r 0.5 1 na e ? 300 ix, v r = 60 v baq35 i r 0.5 1 na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms baq33 v (br) 40 v i r = 5 a, t p /t = 0.01, t p = 0.3 ms baq34 v (br) 70 v baq35 v (br) 140 v diode capacitance v r = 0 v, f = 1 mhz c d 3pf 04 08 0 120 160 1 10 100 1000 10 000 i- re v erse c u rrent (na) r t j - j u nction temperat u re (c) 200 94 9079 scattering limit v r = v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i- for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9078 scattering limit t j =2 5 c
baq33, baq34, baq35 www.vishay.com vishay semiconductors rev. 1.8, 31-jul-12 3 document number: 85537 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): minimelf sod-80 cathode indification 0.47 (0.019) max. 2.5 (0.098) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. 2 (0.079) min. 1.6 (0.063) 1.4 (0.055) foot print recommendation: * * the gap bet w een pl u g and glass can be either on cathode or anode side doc u ment no.:6.560-5005.01-4 re v . 8 - date: 07.j u ne.2006 96 12070
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